Detail publikačního výsledku

Transmission Line on Semiconductor Substrate with Distributed Amplification

POKORNÝ, M.; RAIDA, Z.

Originální název

Transmission Line on Semiconductor Substrate with Distributed Amplification

Anglický název

Transmission Line on Semiconductor Substrate with Distributed Amplification

Druh

Článek WoS

Originální abstrakt

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.

Anglický abstrakt

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.

Klíčová slova

GaAs, active, mictrostrip, millimeter-wave, FEM, Gunn, thermal, COMSOL

Klíčová slova v angličtině

GaAs, active, mictrostrip, millimeter-wave, FEM, Gunn, thermal, COMSOL

Autoři

POKORNÝ, M.; RAIDA, Z.

Rok RIV

2011

Vydáno

01.06.2010

Nakladatel

Ústav radioelektroniky, VUT v Brně

Místo

Brno

ISSN

1210-2512

Periodikum

Radioengineering

Svazek

19

Číslo

2

Stát

Česká republika

Strany od

307

Strany do

312

Strany počet

6

BibTex

@article{BUT49178,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Transmission Line on Semiconductor Substrate with Distributed Amplification",
  journal="Radioengineering",
  year="2010",
  volume="19",
  number="2",
  pages="307--312",
  issn="1210-2512"
}