Detail publikačního výsledku

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

PAVELKA, J.; TANUMA, N.; TACANO, M.; ŠIKULA, J.; HANDEL, P.

Originální název

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

Anglický název

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

Druh

Článek WoS

Originální abstrakt

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

Anglický abstrakt

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

Klíčová slova

1/f noise; InGaAs; HFET; MODFET; HEMT

Klíčová slova v angličtině

1/f noise; InGaAs; HFET; MODFET; HEMT

Autoři

PAVELKA, J.; TANUMA, N.; TACANO, M.; ŠIKULA, J.; HANDEL, P.

Rok RIV

2010

Vydáno

14.06.2009

Nakladatel

American Institute of Physics

Místo

Melville, New York

ISSN

0094-243X

Periodikum

AIP conference proceedings

Svazek

1129

Číslo

1

Stát

Spojené státy americké

Strany od

183

Strany do

186

Strany počet

4

BibTex

@article{BUT48538,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Peter H. {Handel}",
  title="Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures",
  journal="AIP conference proceedings",
  year="2009",
  volume="1129",
  number="1",
  pages="183--186",
  issn="0094-243X"
}