Role of humidity in local anodic oxidation: A study of water condensation and electric field distribution

Role of humidity in local anodic oxidation: A study of water condensation and electric field distribution

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This paper deals with the analysis of the influence of humidity on the process of local anodic oxidation carried out by atomic force microscope (AFM) on GaAs (100) surfaces. Recent experiments have shown that the height and half width of oxide nanolines do not increase monotonously with relative humidity, but for lower relative humidities (<50%) the lines comparable in size to those prepared at 90% were obtained. However, their height and width along the lines revealed significant variations. To better understand these phenomena, the AFM force-distance spectroscopy measurements together with computer simulations of an electric-field distribution and water bridge formation between the tip and the substrate at different relative humidities were carried out. Our experiments on AFM force-distance spectroscopy have not proved an enhanced water condensation between the tip and the surface at lower humidities. However, the simulations of the electric field in the vicinity of the tip at the early stages of the oxidation process at low relative humidities showed an increase in the average intensity in the oxide layer promoting the diffusion of oxidizing species toward the substrate and, hence, the formation of oxide lines under these conditions. Finally, our simulations on water bridge variations along the tip track showed that at lower humidities there are higher relative standard deviations in the size of the water bridge while the tip is being moved along the surface. This indicates why the oxide lines showed a bigger variability in size.

This paper deals with the analysis of the influence of humidity on the process of local anodic oxidation carried out by atomic force microscope (AFM) on GaAs (100) surfaces. Recent experiments have shown that the height and half width of oxide nanolines do not increase monotonously with relative humidity, but for lower relative humidities (<50%) the lines comparable in size to those prepared at 90% were obtained. However, their height and width along the lines revealed significant variations. To better understand these phenomena, the AFM force-distance spectroscopy measurements together with computer simulations of an electric-field distribution and water bridge formation between the tip and the substrate at different relative humidities were carried out. Our experiments on AFM force-distance spectroscopy have not proved an enhanced water condensation between the tip and the surface at lower humidities. However, the simulations of the electric field in the vicinity of the tip at the early stages of the oxidation process at low relative humidities showed an increase in the average intensity in the oxide layer promoting the diffusion of oxidizing species toward the substrate and, hence, the formation of oxide lines under these conditions. Finally, our simulations on water bridge variations along the tip track showed that at lower humidities there are higher relative standard deviations in the size of the water bridge while the tip is being moved along the surface. This indicates why the oxide lines showed a bigger variability in size.

anodisation, atomic force microscopy, condensation, gallium arsenide, humidity, III-V semiconductors

anodisation, atomic force microscopy, condensation, gallium arsenide, humidity, III-V semiconductors

BARTOŠÍK, M.; ŠKODA, D.; TOMANEC, O.; KALOUSEK, R.; JÁNSKÝ, P.; ZLÁMAL, J.; SPOUSTA, J.; DUB, P.; ŠIKOLA, T.

2010

07.05.2009

1098-0121

PHYSICAL REVIEW B

79

19

Spojené státy americké

195406

195412

6