Detail publikačního výsledku

Low-frequency noise measurements used for semiconductor light active devices

VANĚK, J., CHOBOLA, Z.

Originální název

Low-frequency noise measurements used for semiconductor light active devices

Anglický název

Low-frequency noise measurements used for semiconductor light active devices

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.

Anglický abstrakt

Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.

Klíčová slova v angličtině

Noise spectroscopy

Autoři

VANĚK, J., CHOBOLA, Z.

Vydáno

24.05.2005

ISSN

0277-786X

Periodikum

Proceedings of SPIE

Svazek

2005

Číslo

5844

Stát

Spojené státy americké

Strany od

86

Strany počet

8

BibTex

@article{BUT46285,
  author="Jiří {Vaněk} and Zdeněk {Chobola} and Vladimír {Brzokoupil} and Jiří {Kazelle}",
  title="Low-frequency noise measurements used for semiconductor light active devices",
  journal="Proceedings of SPIE",
  year="2005",
  volume="2005",
  number="5844",
  pages="8",
  issn="0277-786X"
}