Detail publikačního výsledku

Drivers for power transistors MOSFET a IGBT

VOREL, P.

Originální název

Drivers for power transistors MOSFET a IGBT

Anglický název

Drivers for power transistors MOSFET a IGBT

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction. The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver.

Anglický abstrakt

This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction. The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver.

Klíčová slova v angličtině

transistor MOSFET, transistor IGBT, power electronics, power converters, drivers for power switching transistors, galvanic separation

Autoři

VOREL, P.

Rok RIV

2011

Vydáno

01.01.2004

ISSN

1213-161X

Periodikum

ElectronicsLetters.com - http://www.electronicsletters.com

Svazek

2004

Číslo

1/5

Stát

Česká republika

Strany od

1

Strany počet

9

BibTex

@article{BUT45697,
  author="Pavel {Vorel}",
  title="Drivers for power transistors MOSFET a IGBT",
  journal="ElectronicsLetters.com - http://www.electronicsletters.com",
  year="2004",
  volume="2004",
  number="1/5",
  pages="9",
  issn="1213-161X"
}