Detail publikačního výsledku

TOF-LEIS spectra of Ga/Si: Peak shape analysis

KOLÍBAL, M.; TOMANEC, O.; PRŮŠA, S.; PLOJHAR, M.; MARKIN, S.; DITTRICHOVÁ, L.; SPOUSTA, J.; BAUER, P.; ŠIKOLA, T.

Originální název

TOF-LEIS spectra of Ga/Si: Peak shape analysis

Anglický název

TOF-LEIS spectra of Ga/Si: Peak shape analysis

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Low energy ion scattering (LEIS) is used to characterize Ga layers deposited onto Si(111)-(7x7) substrates at different deposition temperatures. The Ga/Si system exhibits a pronounced 3D island growth and thus is a suitable object to investigate the relation between LEIS-peak shapes and the morphology of thin films. It is shown that up to a certain critical depth (a few MLs) the single scattering component can be used as a measure of the number of surface Ga atoms per unit area. If a higher amount of Ga is deposited, the single scattering model is not valid anymore and multiple scattering becomes significant. The Ga peak starts to be asymmetric with a well developed multiple scattering component. Such a component can be utilized for the observation of the morphology of the layers. It was found that the more intensive the 3D growth of adsorbed Ga atoms on the Si(111) substrate, the more pronounced is the multiple scattering yield for a given amount of Ga.

Anglický abstrakt

Low energy ion scattering (LEIS) is used to characterize Ga layers deposited onto Si(111)-(7x7) substrates at different deposition temperatures. The Ga/Si system exhibits a pronounced 3D island growth and thus is a suitable object to investigate the relation between LEIS-peak shapes and the morphology of thin films. It is shown that up to a certain critical depth (a few MLs) the single scattering component can be used as a measure of the number of surface Ga atoms per unit area. If a higher amount of Ga is deposited, the single scattering model is not valid anymore and multiple scattering becomes significant. The Ga peak starts to be asymmetric with a well developed multiple scattering component. Such a component can be utilized for the observation of the morphology of the layers. It was found that the more intensive the 3D growth of adsorbed Ga atoms on the Si(111) substrate, the more pronounced is the multiple scattering yield for a given amount of Ga.

Klíčová slova

Low energy ion scattering; Morphology; Growth; Gallium; Silicon

Klíčová slova v angličtině

Low energy ion scattering; Morphology; Growth; Gallium; Silicon

Autoři

KOLÍBAL, M.; TOMANEC, O.; PRŮŠA, S.; PLOJHAR, M.; MARKIN, S.; DITTRICHOVÁ, L.; SPOUSTA, J.; BAUER, P.; ŠIKOLA, T.

Vydáno

01.12.2007

ISSN

0168-583X

Periodikum

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Svazek

265

Číslo

2

Stát

Nizozemsko

Strany od

569

Strany do

575

Strany počet

7

BibTex

@article{BUT44960,
  author="Miroslav {Kolíbal} and Ondřej {Tomanec} and Stanislav {Průša} and Martin {Plojhar} and S. N. {Markin} and Libuše {Dittrichová} and Jiří {Spousta} and P. {Bauer} and Tomáš {Šikola}",
  title="TOF-LEIS spectra of Ga/Si: Peak shape analysis",
  journal="NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS",
  year="2007",
  volume="265",
  number="2",
  pages="569--575",
  issn="0168-583X"
}