Detail publikačního výsledku

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

ROUČKA, R., TOLLE, J., CROZIER, P., CHIZMESHYA, A., TSONG, I., KOUVETAKIS, J., POWELEIT, C., SMITH, D.

Originální název

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Anglický název

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Anglický abstrakt

Two compounds SiC and AlN, normally insoluble in each other below similar to2000 degreesC , are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degreesC. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Klíčová slova v angličtině

DENSITY-FUNCTIONAL THEORY, MOLECULAR-BEAM EPITAXY, POLY-ATOMIC SYSTEMS, ALUMINUM NITRIDE, ELECTRONIC-STRUCTURE, SILICON-CARBIDE, SOLID-SOLUTIONS, ALLOYS, INTERFACES, AIN

Autoři

ROUČKA, R., TOLLE, J., CROZIER, P., CHIZMESHYA, A., TSONG, I., KOUVETAKIS, J., POWELEIT, C., SMITH, D.

Vydáno

20.05.2002

ISSN

0031-9007

Periodikum

PHYSICAL REVIEW LETTERS

Svazek

88

Číslo

20

Stát

Spojené státy americké

Strany od

206102

Strany počet

5

BibTex

@article{BUT40591,
  author="Radek {Roučka} and J. {Tolle} and P. {Crozier} and A. {Chizmeshya} and I. {Tsong} and J. {Kouvetakis} and C. D. {Poweleit} and D. J. {Smith}",
  title="Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN",
  journal="PHYSICAL REVIEW LETTERS",
  year="2002",
  volume="88",
  number="20",
  pages="5",
  issn="0031-9007"
}