Detail publikačního výsledku

Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties

SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.

Originální název

Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties

Anglický název

Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

The deposition of a-Si:H by electron beam evaporation and ion beam hydrogenation is described. The films are characterized by density, hydrogen content and refractive index and by SIMS and AES analysis. The transport properties were determined by conductivity and photoconductivity measurements and using the temperature modulated space charge limited currents method (TM-SCLC)

Anglický abstrakt

The deposition of a-Si:H by electron beam evaporation and ion beam hydrogenation is described. The films are characterized by density, hydrogen content and refractive index and by SIMS and AES analysis. The transport properties were determined by conductivity and photoconductivity measurements and using the temperature modulated space charge limited currents method (TM-SCLC)

Klíčová slova v angličtině

amorphous silicon,evaporation, ion beam

Autoři

SALYK, O., SCHAUER, F., ZMEŠKAL, O., ZUBÍK, K., POLCER, J.

Vydáno

01.01.1987

Kniha

J.Non-Crystall. Solids 97/98

Svazek

97&98

Strany od

1435

BibTex

@article{BUT39723,
  author="Ota {Salyk} and František {Schauer} and Oldřich {Zmeškal} and Karel {Zubík} and Jaroslav {Polcer}",
  title="Amorphous Hydrogenated Silicon Prepared by Ion Beam Assisted Raective Evaporation-Preparation and Basic Properties",
  year="1987",
  volume="97&98"
}