Detail publikačního výsledku

Bulk Resistance Decay in CdTe

ANDREEV, A.; GRMELA, L.; ŠIKULA, J.; CHVÁTAL, M.; RAŠKA, M.

Originální název

Bulk Resistance Decay in CdTe

Anglický název

Bulk Resistance Decay in CdTe

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.

Anglický abstrakt

Bulk resistance decay of cadmium telluride (CdTe) single crystals was investigated. The bulk resistance of each CdTe single crystal was measured during long time interval. The samples were placed into a cryostat. That allowed us to hold the temperature constant during the measurements and eliminate the illumination influence. The measurements started and were continued at 300 K and after some period of time it was sharply raised up to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.

Klíčová slova

CdTe single crystal; relaxation process; deep level defects

Klíčová slova v angličtině

CdTe single crystal; relaxation process; deep level defects

Autoři

ANDREEV, A.; GRMELA, L.; ŠIKULA, J.; CHVÁTAL, M.; RAŠKA, M.

Rok RIV

2010

Vydáno

18.05.2009

Nakladatel

Institute of Electrical and Electronics Engineers, St. Petersburg

Místo

St. Petersburg, Russia

ISBN

978-1-4244-3861-7

Kniha

IEEE EUROCON 2009

Strany od

1181

Strany do

1185

Strany počet

4

BibTex

@inproceedings{BUT33591,
  author="Alexey {Andreev} and Lubomír {Grmela} and Josef {Šikula} and Miloš {Chvátal} and Michal {Raška}",
  title="Bulk Resistance Decay in CdTe",
  booktitle="IEEE EUROCON 2009",
  year="2009",
  pages="1181--1185",
  publisher="Institute of Electrical and Electronics Engineers, St. Petersburg",
  address="St. Petersburg, Russia",
  isbn="978-1-4244-3861-7"
}