Detail publikačního výsledku

Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors

ŠIKULA, J.; SEDLÁKOVÁ, V.; HLÁVKA, J.; HÖSCHEL, P.; SITA, Z.; ZEDNÍČEK, T.; TACANO, M.; HASHIGUCHI, S.

Originální název

Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors

Anglický název

Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

The aim of this paper is to characterize the active region quality of NbO and Ta capacitors. This method for assesment of defects in active region of NbO and Ta capacitors is based on the evaluation of VA and noise characteristics and theirs temperature dependences.

Anglický abstrakt

The aim of this paper is to characterize the active region quality of NbO and Ta capacitors. This method for assesment of defects in active region of NbO and Ta capacitors is based on the evaluation of VA and noise characteristics and theirs temperature dependences.

Klíčová slova

Low frequency noise, NbO, Ta

Klíčová slova v angličtině

Low frequency noise, NbO, Ta

Autoři

ŠIKULA, J.; SEDLÁKOVÁ, V.; HLÁVKA, J.; HÖSCHEL, P.; SITA, Z.; ZEDNÍČEK, T.; TACANO, M.; HASHIGUCHI, S.

Vydáno

01.01.2005

Kniha

25th Capacitor and Resistor Technology Symposium

ISSN

0887-7491

Periodikum

Capacitor and Resistor Technology

Svazek

2005

Číslo

10

Stát

Spojené státy americké

Strany od

210

Strany počet

6

BibTex

@inproceedings{BUT31369,
  author="Josef {Šikula} and Vlasta {Sedláková} and Jan {Hlávka} and Pavel {Höschel} and Zdeněk {Sita} and Tomáš {Zedníček} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Transport and Noise Characteristics of Niobium Oxide and Tantalum Capacitors",
  booktitle="25th Capacitor and Resistor Technology Symposium",
  year="2005",
  journal="Capacitor and Resistor Technology",
  volume="2005",
  number="10",
  pages="6",
  issn="0887-7491"
}