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Detail publikačního výsledku
PAVLÍK, M.; HÁZE, J.; VRBA, R.
Originální název
A MATLAB Model of the Second Generation Switched Current Memory Cell
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
The paper deals with the design of the second generation memory cell MATLAB model. There are described errors of the second generation switched current (SI) memory cell and impact of the SI technique on the transfer function of the memory cell, too. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.
Anglický abstrakt
Klíčová slova
switched current, memory cell, errors, model
Klíčová slova v angličtině
Autoři
Rok RIV
2010
Vydáno
11.10.2009
Nakladatel
IEEE Computer Society
Místo
Sliema
ISBN
978-0-7695-3832-7
Kniha
Proceedings The Second International Conference on Advances in Circuits, Electronics and Micro-electronics CENICS 2009
Edice
1
Strany od
101
Strany do
104
Strany počet
5
BibTex
@inproceedings{BUT30795, author="Michal {Pavlík} and Jiří {Háze} and Radimír {Vrba}", title="A MATLAB Model of the Second Generation Switched Current Memory Cell", booktitle="Proceedings The Second International Conference on Advances in Circuits, Electronics and Micro-electronics CENICS 2009", year="2009", series="1", number="1", pages="101--104", publisher="IEEE Computer Society", address="Sliema", doi="10.1109/CENICS.2009.27", isbn="978-0-7695-3832-7" }