Detail publikačního výsledku

Si Diode - Determination of Generation and Recombination Coefficients

RAŠKA, M.; PALAI-DANY, T.

Originální název

Si Diode - Determination of Generation and Recombination Coefficients

Anglický název

Si Diode - Determination of Generation and Recombination Coefficients

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

The article deals with a study microplasma regions which is characterized by bistable current noise, microplasma noise. The microplasma noise is possible to describe with two state stochastic process of generation - recombination type. The cofficients generation and recombination can be determined by several methods, which are inside the article.

Anglický abstrakt

The article deals with a study microplasma regions which is characterized by bistable current noise, microplasma noise. The microplasma noise is possible to describe with two state stochastic process of generation - recombination type. The cofficients generation and recombination can be determined by several methods, which are inside the article.

Klíčová slova

microplasma, breakdown, PN junction, diode, recombination, generation

Klíčová slova v angličtině

microplasma, breakdown, PN junction, diode, recombination, generation

Autoři

RAŠKA, M.; PALAI-DANY, T.

Vydáno

13.08.2007

Nakladatel

University of Miskolc

Místo

Miskolc, Hungary

ISBN

978-963-661-779-0

Kniha

6th International Conference of Phd Students

Edice

1

Strany od

361

Strany do

366

Strany počet

5

BibTex

@inproceedings{BUT28769,
  author="Michal {Raška} and Tomáš {Palai-Dany}",
  title="Si Diode - Determination of Generation and Recombination Coefficients",
  booktitle="6th International Conference of Phd Students",
  year="2007",
  series="1",
  number="1",
  pages="361--366",
  publisher="University of Miskolc",
  address="Miskolc, Hungary",
  isbn="978-963-661-779-0"
}