Detail publikačního výsledku

Bias Voltage Control for RF PE CVD

Boušek J.

Originální název

Bias Voltage Control for RF PE CVD

Anglický název

Bias Voltage Control for RF PE CVD

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

To maintain high reproducibility of the RF PE CVD deposition process the ratio of the deposition rate to sputtering rate must be controlled precisely. To determine the ion bombardment the voltage difference between plasma and substrate must be controlled. In paper are suggested and discussed various possibilities how to control the RF bias voltage of substrate holder. To enhance the decomposition of reactant gases to reactive species and simultaneously ensure defined ion bombardment use of two RF frequency power supply might be an optimal solution.

Anglický abstrakt

To maintain high reproducibility of the RF PE CVD deposition process the ratio of the deposition rate to sputtering rate must be controlled precisely. To determine the ion bombardment the voltage difference between plasma and substrate must be controlled. In paper are suggested and discussed various possibilities how to control the RF bias voltage of substrate holder. To enhance the decomposition of reactant gases to reactive species and simultaneously ensure defined ion bombardment use of two RF frequency power supply might be an optimal solution.

Klíčová slova

RF PE CVD, Sputtering, Ion bombardment, Substrate bias

Klíčová slova v angličtině

RF PE CVD, Sputtering, Ion bombardment, Substrate bias

Autoři

Boušek J.

Vydáno

14.10.2006

Nakladatel

Nakl. Novotný

ISBN

960-8025-99-8

Kniha

Socrates International Conference. Electronic System Design 2006

Strany od

163

Strany počet

6

BibTex

@inproceedings{BUT24896,
  author="Jaroslav {Boušek}",
  title="Bias Voltage Control for RF PE CVD",
  booktitle="Socrates International Conference. Electronic System Design 2006",
  year="2006",
  pages="6",
  publisher="Nakl. Novotný",
  isbn="960-8025-99-8"
}