Noise Spectroscopy Used in Si:H Amorphous Solar Cells Diagnostic

Noise Spectroscopy Used in Si:H Amorphous Solar Cells Diagnostic

en

Noise could be use for a long time as a diagnostic tool in device research. [1] Low frequency noise is a more sensitive tool for degradation phenomena like electro-migration and sort breakdown [2] as others method using measurement of transport characteristic. All types of noise, thermal, shot, generations-recombination and 1/f noise play a different role in reliability analysis. The correlation between noise in a device, its reliability and why conduction noise, especially 1/f noise, is a quality indicator for devices [3, 4]. Opportunities and limitations to use low/frequency noise as a diagnostic tool for device quality discuss Vandame [5]. We tried to compare noise of different type of silicone solar cells. We have measured two different set of a-Si:H solar cell. The both sets were prepared using the thin film technique in the laboratory of Delft University of Technology, DIMES, Delft, The Netherlands. The first set contained 21 samples of photovoltaic solar cells simple PiN structure made on the glass substrate and. the second set was contained 16 samples of photovoltaic solar cell PiN structure with extended i layer. To assess the condition and quality of these solar cells, we have analyzed their noise and carrier transport characteristics. The noise voltage was picked up across the load resistance RL = 100 Ω. A drop in the noise voltage occurring at voltages exceeding UF2 = 0.32 V is due to a decrease in the junction dynamic resistance, which is virtually shunting the load resistance. The monocrystaline silicon solar cell and the amorphous silicon solar cell have very similar shape of spectral voltage noise density versus forward voltage and more depend on quality of whole device as on type of material.

Noise could be use for a long time as a diagnostic tool in device research. [1] Low frequency noise is a more sensitive tool for degradation phenomena like electro-migration and sort breakdown [2] as others method using measurement of transport characteristic. All types of noise, thermal, shot, generations-recombination and 1/f noise play a different role in reliability analysis. The correlation between noise in a device, its reliability and why conduction noise, especially 1/f noise, is a quality indicator for devices [3, 4]. Opportunities and limitations to use low/frequency noise as a diagnostic tool for device quality discuss Vandame [5]. We tried to compare noise of different type of silicone solar cells. We have measured two different set of a-Si:H solar cell. The both sets were prepared using the thin film technique in the laboratory of Delft University of Technology, DIMES, Delft, The Netherlands. The first set contained 21 samples of photovoltaic solar cells simple PiN structure made on the glass substrate and. the second set was contained 16 samples of photovoltaic solar cell PiN structure with extended i layer. To assess the condition and quality of these solar cells, we have analyzed their noise and carrier transport characteristics. The noise voltage was picked up across the load resistance RL = 100 Ω. A drop in the noise voltage occurring at voltages exceeding UF2 = 0.32 V is due to a decrease in the junction dynamic resistance, which is virtually shunting the load resistance. The monocrystaline silicon solar cell and the amorphous silicon solar cell have very similar shape of spectral voltage noise density versus forward voltage and more depend on quality of whole device as on type of material.