Detail publikačního výsledku

Enhanced Electron Field Emission from Low-Temperature-Grown GaN Nanocrystals

POKORNY, D.; MACH, J.; BARTOSIK, M.; NEZVAL, D.; PIASTEK, J.; MIKERASEK, V.; KOSTKA, M.; STASTNY, J.; SIKOLA, T.

Originální název

Enhanced Electron Field Emission from Low-Temperature-Grown GaN Nanocrystals

Anglický název

Enhanced Electron Field Emission from Low-Temperature-Grown GaN Nanocrystals

Druh

Článek WoS

Originální abstrakt

GaN nanocrystals were synthesized on graphene-coated copper substrates using a two-step low-temperature droplet-epitaxy method. The deposition temperature (100-200 degrees C) and the nitrogen-ion current density during nitridation (1000-1900 nA/cm(2)) were varied to tune nanocrystal density and morphology. SEM revealed that growth at 100 degrees C led to dense ensembles of compact nanocrystals (40 +/- 5 nm, 445 nanocrystals/& micro;m(2)), whereas deposition at 200 degrees C yielded larger but more sparsely distributed nanocrystals (80 +/- 16 nm, 46 nanocrystals/& micro;m(2)). Increasing the nitrogen-ion current density at 200 degrees C promoted edge-rich hollow structures. Field-emission measurements showed that compact high-density ensembles delivered higher emission currents due to their large cumulative emitting area, while edge-rich hollow nanocrystals exhibited the best performance with the lowest turn-on field (3.4 V/& micro;m) and the highest field-enhancement factor (beta = 1470). These results demonstrate that the substrate temperature and ion current density provide effective control over the morphology and, consequently, the emission behavior of low-temperature GaN nanostructures.

Anglický abstrakt

GaN nanocrystals were synthesized on graphene-coated copper substrates using a two-step low-temperature droplet-epitaxy method. The deposition temperature (100-200 degrees C) and the nitrogen-ion current density during nitridation (1000-1900 nA/cm(2)) were varied to tune nanocrystal density and morphology. SEM revealed that growth at 100 degrees C led to dense ensembles of compact nanocrystals (40 +/- 5 nm, 445 nanocrystals/& micro;m(2)), whereas deposition at 200 degrees C yielded larger but more sparsely distributed nanocrystals (80 +/- 16 nm, 46 nanocrystals/& micro;m(2)). Increasing the nitrogen-ion current density at 200 degrees C promoted edge-rich hollow structures. Field-emission measurements showed that compact high-density ensembles delivered higher emission currents due to their large cumulative emitting area, while edge-rich hollow nanocrystals exhibited the best performance with the lowest turn-on field (3.4 V/& micro;m) and the highest field-enhancement factor (beta = 1470). These results demonstrate that the substrate temperature and ion current density provide effective control over the morphology and, consequently, the emission behavior of low-temperature GaN nanostructures.

Klíčová slova

GaN nanocrystals; field emission; low-temperature growth; nitrogen ion nitridation; graphene-coated copper; Fowler–Nordheim analysis; electron emission sources

Klíčová slova v angličtině

GaN nanocrystals; field emission; low-temperature growth; nitrogen ion nitridation; graphene-coated copper; Fowler–Nordheim analysis; electron emission sources

Autoři

POKORNY, D.; MACH, J.; BARTOSIK, M.; NEZVAL, D.; PIASTEK, J.; MIKERASEK, V.; KOSTKA, M.; STASTNY, J.; SIKOLA, T.

Vydáno

04.06.2026

Nakladatel

Amer Chemical Soc

Periodikum

Crystal growth & design

Svazek

26

Číslo

11

Stát

Spojené státy americké

Strany od

4113

Strany do

4123

Strany počet

7

URL

https://pubs.acs.org/doi/10.1021/acs.cgd.6c00228

BibTex

@article{BUT211747,
  author="{} and David {Pokorný} and Jindřich {Mach} and Miroslav {Bartošík} and David {Nezval} and Jakub {Piastek} and Vojtěch {Mikerásek} and Marek {Kostka} and Jakub {Šťastný} and Tomáš {Šikola}",
  title="Enhanced Electron Field Emission from Low-Temperature-Grown GaN Nanocrystals",
  journal="Crystal growth & design",
  year="2026",
  volume="26",
  number="11",
  pages="4113--4123",
  doi="10.1021/acs.cgd.6c00228",
  issn="1528-7483",
  url="https://pubs.acs.org/doi/10.1021/acs.cgd.6c00228"
}