Detail publikačního výsledku

An empirical X-ray K-Ratio framework for thickness measurement of 2D Si and SiO₂ thin films and SiO2 layer on Si substrate

JABER, A.; SHAHEEN, A.; AL-MAZAYDEH, M.; MOUSA, M.; AL DMOUR, H.; ALSOUD, A.

Originální název

An empirical X-ray K-Ratio framework for thickness measurement of 2D Si and SiO₂ thin films and SiO2 layer on Si substrate

Anglický název

An empirical X-ray K-Ratio framework for thickness measurement of 2D Si and SiO₂ thin films and SiO2 layer on Si substrate

Druh

Článek WoS

Originální abstrakt

This study presents an empirical framework based on the X-ray K-ratio method for measuring the thickness of 2D silicon (Si) and silicon dioxide (SiO₂) thin films, as well as SiO₂ layers deposited on silicon substrates. The approach relies on analyzing the ratio of characteristic X-ray intensities emitted from the sample relative to a reference, establishing a direct relationship between the K-ratio and film thickness. The proposed model accounts for absorption and scattering effects within the material, enabling accurate thickness estimation, particularly for ultra-thin films. The results demonstrate that this method provides a reliable, non-destructive, and efficient alternative to conventional thickness measurement techniques, making it suitable for applications in semiconductor research and industry.

Anglický abstrakt

This study presents an empirical framework based on the X-ray K-ratio method for measuring the thickness of 2D silicon (Si) and silicon dioxide (SiO₂) thin films, as well as SiO₂ layers deposited on silicon substrates. The approach relies on analyzing the ratio of characteristic X-ray intensities emitted from the sample relative to a reference, establishing a direct relationship between the K-ratio and film thickness. The proposed model accounts for absorption and scattering effects within the material, enabling accurate thickness estimation, particularly for ultra-thin films. The results demonstrate that this method provides a reliable, non-destructive, and efficient alternative to conventional thickness measurement techniques, making it suitable for applications in semiconductor research and industry.

Klíčová slova

k-ratio;X-ray microanalysis;thin film;Monte Carlo simulation;Backscattering electron coefficient;Silicon dioxide;Electron–solid interaction

Klíčová slova v angličtině

k-ratio;X-ray microanalysis;thin film;Monte Carlo simulation;Backscattering electron coefficient;Silicon dioxide;Electron–solid interaction

Autoři

JABER, A.; SHAHEEN, A.; AL-MAZAYDEH, M.; MOUSA, M.; AL DMOUR, H.; ALSOUD, A.

Vydáno

15.02.2026

Nakladatel

Elsevier

Periodikum

Ultramicroscopy

Svazek

284

Číslo

May

Stát

Nizozemsko

Strany od

114335

Strany počet

7

URL

https://www.sciencedirect.com/science/article/pii/S0304399126000288

Plný text v Digitální knihovně

http://hdl.handle.net/11012/527833

BibTex

@article{BUT201828,
  author="{} and Adel A {Shaheen} and  {} and  {} and  {} and Ammar Awadallah Ahmad {Alsoud}",
  title="An empirical X-ray K-Ratio framework for thickness measurement of 2D Si and SiO₂ thin films and SiO2 layer on Si substrate",
  journal="Ultramicroscopy",
  year="2026",
  volume="284",
  number="May",
  pages="7",
  doi="10.1016/j.ultramic.2026.114335",
  issn="0304-3991",
  url="https://www.sciencedirect.com/science/article/pii/S0304399126000288"
}