Detail publikačního výsledku

Influence of initial misfit strains on small scale domain switching ahead of interface crack between piezoelectric layer and dielectric isotropic substrate

Hrstka, Kotoul, Profant, Aliabadi

Originální název

Influence of initial misfit strains on small scale domain switching ahead of interface crack between piezoelectric layer and dielectric isotropic substrate

Anglický název

Influence of initial misfit strains on small scale domain switching ahead of interface crack between piezoelectric layer and dielectric isotropic substrate

Druh

Článek - ostatní

Originální abstrakt

his study derives the effect of discontinuous initial strain distributions on the small-scale domain switching ahead of the bi-material notch formed between a piezoelectric layer and dielectric isotropic substrate. As a piezoelectric layer the piezoelectric ceramics PZT-5H grown on the elastic substrate formed by amorphous silicon dioxide (SiO 2) is considered. The energetic switching principle and micromechanical domain switching framework proposed by Hwang et al. (1995) is applied. The initial thermal misfit constant strain is included in the constitutive relations. The analysis of the asymptotic in-plane field of the bi-material notch is conducted utilizing the extended Lekhnitskii-Eshelby-Stroh formalism. The asymptotic in-plane field is used to predict the domain switching zone applying the energy-based criterion. The influence of the thermal misfit strain on the size and shape of the switching zone in the piezoelectric layer is computed for various initial poling directions.

Anglický abstrakt

his study derives the effect of discontinuous initial strain distributions on the small-scale domain switching ahead of the bi-material notch formed between a piezoelectric layer and dielectric isotropic substrate. As a piezoelectric layer the piezoelectric ceramics PZT-5H grown on the elastic substrate formed by amorphous silicon dioxide (SiO 2) is considered. The energetic switching principle and micromechanical domain switching framework proposed by Hwang et al. (1995) is applied. The initial thermal misfit constant strain is included in the constitutive relations. The analysis of the asymptotic in-plane field of the bi-material notch is conducted utilizing the extended Lekhnitskii-Eshelby-Stroh formalism. The asymptotic in-plane field is used to predict the domain switching zone applying the energy-based criterion. The influence of the thermal misfit strain on the size and shape of the switching zone in the piezoelectric layer is computed for various initial poling directions.

Klíčová slova

Small-scale domain switching; Piezoelectric interface crack; Expanded LES formalism; Two-state H-integral

Klíčová slova v angličtině

Small-scale domain switching; Piezoelectric interface crack; Expanded LES formalism; Two-state H-integral

Autoři

Hrstka, Kotoul, Profant, Aliabadi

Rok RIV

2026

Vydáno

17.02.2026

Nakladatel

Elsevier BV

Periodikum

Procedia Structural Integrity

Svazek

80

Stát

Nizozemsko

Strany od

471

Strany do

492

Strany počet

22

URL

https://www.sciencedirect.com/science/article/pii/S2452321626001514

BibTex

@misc{BUT201455,
  author="Miroslav {Hrstka} and Michal {Kotoul} and Tomáš {Profant} and  {}",
  title="Influence of initial misfit strains on small scale domain switching ahead of interface crack between piezoelectric layer and dielectric isotropic substrate",
  year="2026",
  journal="Procedia Structural Integrity",
  volume="80",
  pages="471--492",
  publisher="Elsevier BV",
  doi="10.1016/j.prostr.2026.02.046",
  url="https://www.sciencedirect.com/science/article/pii/S2452321626001514",
  note="Article - other"
}