Detail publikačního výsledku

Flux method and heterojunction transistors

Vaněk,J.

Originální název

Flux method and heterojunction transistors

Anglický název

Flux method and heterojunction transistors

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This paper concerns the overview and basic features of the McKelveys flux method, which forms the physical basis for modeling the complex device physics and description of the carrier transport in modern heterojunction bipolar transistors (HBTs). This method is also available to construct a physical model of the transistor with the quasi-ballistic transport in short base.

Anglický abstrakt

This paper concerns the overview and basic features of the McKelveys flux method, which forms the physical basis for modeling the complex device physics and description of the carrier transport in modern heterojunction bipolar transistors (HBTs). This method is also available to construct a physical model of the transistor with the quasi-ballistic transport in short base.

Klíčová slova

Flux method, heterostructures

Klíčová slova v angličtině

Flux method, heterostructures

Autoři

Vaněk,J.

Vydáno

28.04.2005

Nakladatel

Ing. Zdeněk Novotný CSc., Ondráčková 105, Brno

Místo

Brno

ISBN

80-214-2888-0

Kniha

Proceedings of the 11th Conference and Competition STUDENT EEICT 2005 Volume1

Strany od

222

Strany počet

3

URL

http://www.feec.vutbr.cz/EEICT/2005/sbornik/02-Magisterske_projekty/06-Mikroelektronika_a_technologie/07-xvanek12.pdf

BibTex

@inproceedings{BUT19657,
  author="Jan {Vaněk}",
  title="Flux method and heterojunction transistors",
  booktitle="Proceedings of the 11th Conference and Competition STUDENT EEICT 2005 Volume1",
  year="2005",
  number="1",
  pages="3",
  publisher="Ing. Zdeněk Novotný CSc., Ondráčková 105, Brno",
  address="Brno",
  isbn="80-214-2888-0",
  url="http://www.feec.vutbr.cz/EEICT/2005/sbornik/02-Magisterske_projekty/06-Mikroelektronika_a_technologie/07-xvanek12.pdf"
}