Detail publikačního výsledku

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

HÉGR, O.

Originální název

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

Anglický název

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

In our work we deal with SiNX and SiO2 layers deposited by means of reactive magnetron sputtering on the different crystalline silicone surfaces. The aim of work is evaluation of both surface recombination and optical properties of this layers and their comparison with standard solar cells made by Solartec company (Czech republic). Silicon oxide layer (10 – 20 nm) created before silicon nitride layer (70 – 80nm) deposition leads to further decrease of surface defects. Reactive magnetron sputtering eliminate high-temperature stress in deposition process of silicon nitride and silicon dioxide. In this process is possible to obtain comparatively high deposition rate (even to 10 nm/min for SiNx).

Anglický abstrakt

In our work we deal with SiNX and SiO2 layers deposited by means of reactive magnetron sputtering on the different crystalline silicone surfaces. The aim of work is evaluation of both surface recombination and optical properties of this layers and their comparison with standard solar cells made by Solartec company (Czech republic). Silicon oxide layer (10 – 20 nm) created before silicon nitride layer (70 – 80nm) deposition leads to further decrease of surface defects. Reactive magnetron sputtering eliminate high-temperature stress in deposition process of silicon nitride and silicon dioxide. In this process is possible to obtain comparatively high deposition rate (even to 10 nm/min for SiNx).

Klíčová slova

solar cell, passivation layer, reactive magnetron sputtering, silicon nitride, silicon dioxide

Klíčová slova v angličtině

solar cell, passivation layer, reactive magnetron sputtering, silicon nitride, silicon dioxide

Autoři

HÉGR, O.

Vydáno

01.01.2006

Nakladatel

Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno

ISBN

80-214-3162-8

Kniha

Proceedings of the 12th Conference STUDENT EEICT 2006 Volume 3

Svazek

1

Číslo

1

Strany od

171

Strany počet

4

BibTex

@inproceedings{BUT19634,
  author="Ondřej {Hégr}",
  title="Reactive magnetron sputtering silicon nitride layer for passivation of solar cells",
  booktitle="Proceedings of the 12th Conference STUDENT EEICT 2006 Volume 3",
  year="2006",
  volume="1",
  number="1",
  pages="4",
  publisher="Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  isbn="80-214-3162-8"
}