Detail publikace

A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology

KLEDROWETZ, V. PROKOP, R. FUJCIK, L. HÁZE, J.

Originální název

A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

This paper presents a novel analog front-end for EMG sensor signal processing powered by 1 V. Such a low supply voltage requires specific design steps enabled using the 28 nm fully depleted silicon on insulator (FDSOI) technology from STMicroelectronics. An active ground circuit is implemented to keep the input common-mode voltage close to the analog ground and to minimize external interference. The amplifier circuit comprises an input instrumentation amplifier (INA) and a programmable-gain amplifier (PGA). Both are implemented in a fully differential topology. The actual performance of the circuit is analyzed using the corner and Monte Carlo analyses that comprise fifth-hundred samples for the global and local process variations. The proposed circuit achieves a high common-mode rejection ratio (CMRR) of 105.5 dB and a high input impedance of 11 GO with a chip area of 0.09 mm(2).

Klíčová slova

common-mode rejection ratio (CMRR); fully differential difference amplifier (FDDA); driven-right-leg circuit; active ground circuit; fully depleted silicon on insulator (FDSOI); electromyography (EMG)

Autoři

KLEDROWETZ, V.; PROKOP, R.; FUJCIK, L.; HÁZE, J.

Vydáno

24. 3. 2023

Nakladatel

MDPI

Místo

BASEL

ISSN

1424-8220

Periodikum

SENSORS

Ročník

23

Číslo

7

Stát

Švýcarská konfederace

Strany od

1

Strany do

20

Strany počet

20

URL

https://www.mdpi.com/1424-8220/23/7/3422

Plný text v Digitální knihovně

http://hdl.handle.net/11012/213549

BibTex

@article{BUT183441,
  author="Vilém {Kledrowetz} and Roman {Prokop} and Lukáš {Fujcik} and Jiří {Háze}",
  title="A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology",
  journal="SENSORS",
  year="2023",
  volume="23",
  number="7",
  pages="1--20",
  doi="10.3390/s23073422",
  issn="1424-8220",
  url="https://www.mdpi.com/1424-8220/23/7/3422"
}