Active realization of analog multi-state memory

Active realization of analog multi-state memory

Funkční vzorek

This functional example implements mathematical model of multi-state memory cell. Original system is based on a concept of series and anti-series connection of resonant tunneling diodes working on high frequencies and which are fully integrated on chip. Final circuit is able to work as a conventional two-valued memory, but also as the generator of periodic and wideband chaotic waveforms. Vector field of the dynamical system is composed by nine linear segments and such configuration allows obtaining partial analytical solution. All important parameters of dynamical memory are electronically adjustable via external DC voltage sources. Individual state variables are easily measurable as voltages across grounded capacitors.

This functional example implements mathematical model of multi-state memory cell. Original system is based on a concept of series and anti-series connection of resonant tunneling diodes working on high frequencies and which are fully integrated on chip. Final circuit is able to work as a conventional two-valued memory, but also as the generator of periodic and wideband chaotic waveforms. Vector field of the dynamical system is composed by nine linear segments and such configuration allows obtaining partial analytical solution. All important parameters of dynamical memory are electronically adjustable via external DC voltage sources. Individual state variables are easily measurable as voltages across grounded capacitors.

chaos; memory; oscillator; piecewise-linear; vector field

chaos; memory; oscillator; piecewise-linear; vector field

room SD6.77

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