Detail publikačního výsledku

High-frequency floating memristor emulator and its experimental results

RANJAN, RK.; SAGAR, S.; RAUSHAN, S.; KUMARI, B.; RANI, N.; KHATEB, F.

Originální název

High-frequency floating memristor emulator and its experimental results

Anglický název

High-frequency floating memristor emulator and its experimental results

Druh

Článek WoS

Originální abstrakt

In this study, a high-frequency floating-type memristor emulator has been presented. The proposed emulator circuit uses a current conveyor transconductance amplifier, second generation current conveyor, three resistors and a grounded capacitor. The presented floating-type memristor can be configured in both incremental and decremental configurations and performs well up to 5 MHz. The equivalent memristor equation is verified by theoretical analysis of the proposed circuit which also includes non-ideal analysis. The theoretical proposition has been verified through personal simulation program with integrated circuit emphasis simulations using TSMC 0.25 μm complementary metal oxide semiconductor technology parameters. Moreover, non-volatility and Monte Carlo simulation have been performed to check the robustness of the circuit. The effectiveness of the presented memristor emulator design has been verified by printed circuit board prototype using commonly available integrated circuits AD844 and CA3080. The experimental results are included, which show good agreement with the theoretical and simulation results. To test the functionalities of the proposed designs, their applications as parallel and serial combinations, high-pass filter and Chua's oscillator have been presented.

Anglický abstrakt

In this study, a high-frequency floating-type memristor emulator has been presented. The proposed emulator circuit uses a current conveyor transconductance amplifier, second generation current conveyor, three resistors and a grounded capacitor. The presented floating-type memristor can be configured in both incremental and decremental configurations and performs well up to 5 MHz. The equivalent memristor equation is verified by theoretical analysis of the proposed circuit which also includes non-ideal analysis. The theoretical proposition has been verified through personal simulation program with integrated circuit emphasis simulations using TSMC 0.25 μm complementary metal oxide semiconductor technology parameters. Moreover, non-volatility and Monte Carlo simulation have been performed to check the robustness of the circuit. The effectiveness of the presented memristor emulator design has been verified by printed circuit board prototype using commonly available integrated circuits AD844 and CA3080. The experimental results are included, which show good agreement with the theoretical and simulation results. To test the functionalities of the proposed designs, their applications as parallel and serial combinations, high-pass filter and Chua's oscillator have been presented.

Klíčová slova

Memristor emulator

Klíčová slova v angličtině

Memristor emulator

Autoři

RANJAN, RK.; SAGAR, S.; RAUSHAN, S.; KUMARI, B.; RANI, N.; KHATEB, F.

Rok RIV

2019

Vydáno

02.05.2019

Nakladatel

INST ENGINEERING TECHNOLOGY-IET

Místo

ENGLAND

ISSN

1751-858X

Periodikum

IET Circuits Devices & Systems

Svazek

13

Číslo

3, IF: 1.277

Stát

Spojené království Velké Británie a Severního Irska

Strany od

292

Strany do

302

Strany počet

11

URL

https://doi.org/10.1049/iet-cds.2018.5191

BibTex

@article{BUT150862,
  author="RANJAN, RK. and SAGAR, S. and RAUSHAN, S. and KUMARI, B. and RANI, N. and KHATEB, F.",
  title="High-frequency floating memristor emulator and its experimental results",
  journal="IET Circuits Devices & Systems",
  year="2019",
  volume="13",
  number="3, IF: 1.277",
  pages="292--302",
  doi="10.1049/iet-cds.2018.5191",
  issn="1751-858X",
  url="https://doi.org/10.1049/iet-cds.2018.5191"
}