Detail publikačního výsledku

An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor

PTÁČEK, K.

Originální název

An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor

Anglický název

An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This paper presents an accurate DC and RF modeling of nonlinear spiral high resistance polysilicon divider. The spiral divider is a sensing part of the high voltage start-up MOSFET transistor operating up to 700 V. The strong electric field in low doped drain drift area located under the low doped polysilicon spiral divider results in parasitic effects that have a significant influence on DC and RF device characteristics and makes divider ratio voltage and frequency dependent. This paper demonstrates the strucyure of a proposed macro model, implemented voltage and frequency dependency, and physical explanation of these phenomena. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity.

Anglický abstrakt

This paper presents an accurate DC and RF modeling of nonlinear spiral high resistance polysilicon divider. The spiral divider is a sensing part of the high voltage start-up MOSFET transistor operating up to 700 V. The strong electric field in low doped drain drift area located under the low doped polysilicon spiral divider results in parasitic effects that have a significant influence on DC and RF device characteristics and makes divider ratio voltage and frequency dependent. This paper demonstrates the strucyure of a proposed macro model, implemented voltage and frequency dependency, and physical explanation of these phenomena. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity.

Klíčová slova

MOSFET; modeling; spiral polysilicon voltage divider; high-voltage devices

Klíčová slova v angličtině

MOSFET; modeling; spiral polysilicon voltage divider; high-voltage devices

Autoři

PTÁČEK, K.

Rok RIV

2016

Vydáno

29.10.2012

Nakladatel

IEEE

Místo

Piscataway

ISBN

978-1-4673-2475-5

Kniha

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

Strany od

1

Strany do

3

Strany počet

3

BibTex

@inproceedings{BUT101652,
  author="Karel {Ptáček}",
  title="An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor",
  booktitle="2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology",
  year="2012",
  pages="1--3",
  publisher="IEEE",
  address="Piscataway",
  isbn="978-1-4673-2475-5"
}