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Detail publikačního výsledku
ŠIK, O.; TRČKA, T.; GRMELA, L.; VONDRA, M.
Originální název
"Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.
Anglický abstrakt
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100 C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.
Klíčová slova
CdTe, Noise, Reliability
Klíčová slova v angličtině
CdTe, šum, spolehlivost
Autoři
Rok RIV
2014
Vydáno
06.05.2013
Nakladatel
Institute of Research Engineers and Doctors
Místo
Kuala Lumpur, Malaisie
ISBN
978-981-07-6261-2
Kniha
Proc. of the Second Intl. Conf. on Advances in Electronic Devices and Circuits
Edice
1
Strany od
60
Strany do
63
Strany počet
4
BibTex
@inproceedings{BUT101481, author="Ondřej {Šik} and Tomáš {Trčka} and Lubomír {Grmela} and Marek {Vondra}", title="{"}Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors", booktitle="Proc. of the Second Intl. Conf. on Advances in Electronic Devices and Circuits", year="2013", series="1", number="1", pages="60--63", publisher="Institute of Research Engineers and Doctors", address="Kuala Lumpur, Malaisie", isbn="978-981-07-6261-2" }