Detail publikace

Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

KHATEB, F. KHATIB, N. PROMMEE, P. JAIKLA, W. FUJCIK, L.

Originální název

Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit.

Klíčová slova

Floating-gate MOST; quasi-floating-gate MOST, bulk-driven MOST; transconductor.

Autoři

KHATEB, F.; KHATIB, N.; PROMMEE, P.; JAIKLA, W.; FUJCIK, L.

Rok RIV

2013

Vydáno

2. 9. 2013

Místo

Singapore

ISSN

0218-1266

Periodikum

JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS

Ročník

2013 (22)

Číslo

8, IF: 0.238

Stát

Singapurská republika

Strany od

1350073-1

Strany do

1350073-13

Strany počet

13

URL