Detail publikačního výsledku

Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; ČECHAL, J.; URBÁNEK, M.; ŠIKOLA, T.

Originální název

Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

Anglický název

Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions were monitored while in-between the sputtering cycles the TOF-LEIS spectra of scattered He neutrals were acquired. All the measured TOF-LEIS spectra versus sputtering time were displayed in one bitmap from which the depth profiles for different scattering depths were derived and analyzed. Analyzing the TOF-LEIS spectra of He particles scattered from the areas below the layer altered by ion-beam mixing led to an improvement of the depth resolution. In this way the resolution limits due to mixing phenomena can be overcome. Finally, the direct comparison of the DSIMS and TOF-LEIS depth profiles was carried out.

Anglický abstrakt

A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions were monitored while in-between the sputtering cycles the TOF-LEIS spectra of scattered He neutrals were acquired. All the measured TOF-LEIS spectra versus sputtering time were displayed in one bitmap from which the depth profiles for different scattering depths were derived and analyzed. Analyzing the TOF-LEIS spectra of He particles scattered from the areas below the layer altered by ion-beam mixing led to an improvement of the depth resolution. In this way the resolution limits due to mixing phenomena can be overcome. Finally, the direct comparison of the DSIMS and TOF-LEIS depth profiles was carried out.

Klíčová slova

DSIMS; TOF-LEIS; LEIS; Depth profiling; MoSi; HRTEM

Klíčová slova v angličtině

DSIMS; TOF-LEIS; LEIS; Depth profiling; MoSi; HRTEM

Autoři

BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; ČECHAL, J.; URBÁNEK, M.; ŠIKOLA, T.

Rok RIV

2011

Vydáno

01.02.2011

ISSN

0168-583X

Periodikum

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Svazek

269

Číslo

3

Stát

Nizozemsko

Strany od

369

Strany do

373

Strany počet

4

BibTex

@article{BUT51013,
  author="Petr {Bábor} and Radek {Duda} and Stanislav {Průša} and Tomáš {Matlocha} and Miroslav {Kolíbal} and Jan {Čechal} and Michal {Urbánek} and Tomáš {Šikola}",
  title="Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling",
  journal="NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS",
  year="2011",
  volume="269",
  number="3",
  pages="369--373",
  issn="0168-583X"
}