Publication result detail

Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; ČECHAL, J.; URBÁNEK, M.; ŠIKOLA, T.

Original Title

Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

English Title

Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions were monitored while in-between the sputtering cycles the TOF-LEIS spectra of scattered He neutrals were acquired. All the measured TOF-LEIS spectra versus sputtering time were displayed in one bitmap from which the depth profiles for different scattering depths were derived and analyzed. Analyzing the TOF-LEIS spectra of He particles scattered from the areas below the layer altered by ion-beam mixing led to an improvement of the depth resolution. In this way the resolution limits due to mixing phenomena can be overcome. Finally, the direct comparison of the DSIMS and TOF-LEIS depth profiles was carried out.

English abstract

A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions were monitored while in-between the sputtering cycles the TOF-LEIS spectra of scattered He neutrals were acquired. All the measured TOF-LEIS spectra versus sputtering time were displayed in one bitmap from which the depth profiles for different scattering depths were derived and analyzed. Analyzing the TOF-LEIS spectra of He particles scattered from the areas below the layer altered by ion-beam mixing led to an improvement of the depth resolution. In this way the resolution limits due to mixing phenomena can be overcome. Finally, the direct comparison of the DSIMS and TOF-LEIS depth profiles was carried out.

Keywords

DSIMS; TOF-LEIS; LEIS; Depth profiling; MoSi; HRTEM

Key words in English

DSIMS; TOF-LEIS; LEIS; Depth profiling; MoSi; HRTEM

Authors

BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; ČECHAL, J.; URBÁNEK, M.; ŠIKOLA, T.

RIV year

2011

Released

01.02.2011

ISBN

0168-583X

Periodical

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Volume

269

Number

3

State

Kingdom of the Netherlands

Pages from

369

Pages to

373

Pages count

4

BibTex

@article{BUT51013,
  author="Petr {Bábor} and Radek {Duda} and Stanislav {Průša} and Tomáš {Matlocha} and Miroslav {Kolíbal} and Jan {Čechal} and Michal {Urbánek} and Tomáš {Šikola}",
  title="Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling",
  journal="NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS",
  year="2011",
  volume="269",
  number="3",
  pages="369--373",
  issn="0168-583X"
}