Detail publikačního výsledku

Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

POLČÁK, J.; ČECHAL, J.; BÁBOR, P.; URBÁNEK, M.; PRŮŠA, S.; ŠIKOLA, T.

Originální název

Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

Anglický název

Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Angle-resolved XPS depth profiling is a useful method in surface and ultrathin film research. However, it is useful to test various modeled structures in order to get information on its ability to recognize individual sublayers and to find its resolution limits. In this paper, a model consisting of ultrathin films with sharp interfaces has been proposed and the relative intensities of XPS lines as a function of the detection angle calculated. In addition, this method has been improved by the incorporation of an attenuation of the photoelectron signal already in the layer of its origin. Using the signal obtained from the simulation of electron spectra for surface-analysis-based simulations as an experimental one, genetic algorithms have been used for reproducing the profiles, especially for finding its first estimates. In this way, it was possible to find the pros and cons of the angle-resolved XPS method in the depth profiling of Co, C and SiO2 ultrathin layers on Si substrates.

Anglický abstrakt

Angle-resolved XPS depth profiling is a useful method in surface and ultrathin film research. However, it is useful to test various modeled structures in order to get information on its ability to recognize individual sublayers and to find its resolution limits. In this paper, a model consisting of ultrathin films with sharp interfaces has been proposed and the relative intensities of XPS lines as a function of the detection angle calculated. In addition, this method has been improved by the incorporation of an attenuation of the photoelectron signal already in the layer of its origin. Using the signal obtained from the simulation of electron spectra for surface-analysis-based simulations as an experimental one, genetic algorithms have been used for reproducing the profiles, especially for finding its first estimates. In this way, it was possible to find the pros and cons of the angle-resolved XPS method in the depth profiling of Co, C and SiO2 ultrathin layers on Si substrates.

Klíčová slova

angle-resolved X-ray photoelectron spectroscopy; concentration depth profile; genetic algorithms; thin films

Klíčová slova v angličtině

angle-resolved X-ray photoelectron spectroscopy; concentration depth profile; genetic algorithms; thin films

Autoři

POLČÁK, J.; ČECHAL, J.; BÁBOR, P.; URBÁNEK, M.; PRŮŠA, S.; ŠIKOLA, T.

Rok RIV

2011

Vydáno

01.07.2010

ISSN

0142-2421

Periodikum

SURFACE AND INTERFACE ANALYSIS

Svazek

42

Číslo

5-6

Stát

Spojené království Velké Británie a Severního Irska

Strany od

649

Strany do

652

Strany počet

4

BibTex

@article{BUT47312,
  author="Josef {Polčák} and Jan {Čechal} and Petr {Bábor} and Michal {Urbánek} and Stanislav {Průša} and Tomáš {Šikola}",
  title="Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method",
  journal="SURFACE AND INTERFACE ANALYSIS",
  year="2010",
  volume="42",
  number="5-6",
  pages="649--652",
  issn="0142-2421"
}