Publication result detail

Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

POLČÁK, J.; ČECHAL, J.; BÁBOR, P.; URBÁNEK, M.; PRŮŠA, S.; ŠIKOLA, T.

Original Title

Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

English Title

Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Angle-resolved XPS depth profiling is a useful method in surface and ultrathin film research. However, it is useful to test various modeled structures in order to get information on its ability to recognize individual sublayers and to find its resolution limits. In this paper, a model consisting of ultrathin films with sharp interfaces has been proposed and the relative intensities of XPS lines as a function of the detection angle calculated. In addition, this method has been improved by the incorporation of an attenuation of the photoelectron signal already in the layer of its origin. Using the signal obtained from the simulation of electron spectra for surface-analysis-based simulations as an experimental one, genetic algorithms have been used for reproducing the profiles, especially for finding its first estimates. In this way, it was possible to find the pros and cons of the angle-resolved XPS method in the depth profiling of Co, C and SiO2 ultrathin layers on Si substrates.

English abstract

Angle-resolved XPS depth profiling is a useful method in surface and ultrathin film research. However, it is useful to test various modeled structures in order to get information on its ability to recognize individual sublayers and to find its resolution limits. In this paper, a model consisting of ultrathin films with sharp interfaces has been proposed and the relative intensities of XPS lines as a function of the detection angle calculated. In addition, this method has been improved by the incorporation of an attenuation of the photoelectron signal already in the layer of its origin. Using the signal obtained from the simulation of electron spectra for surface-analysis-based simulations as an experimental one, genetic algorithms have been used for reproducing the profiles, especially for finding its first estimates. In this way, it was possible to find the pros and cons of the angle-resolved XPS method in the depth profiling of Co, C and SiO2 ultrathin layers on Si substrates.

Keywords

angle-resolved X-ray photoelectron spectroscopy; concentration depth profile; genetic algorithms; thin films

Key words in English

angle-resolved X-ray photoelectron spectroscopy; concentration depth profile; genetic algorithms; thin films

Authors

POLČÁK, J.; ČECHAL, J.; BÁBOR, P.; URBÁNEK, M.; PRŮŠA, S.; ŠIKOLA, T.

RIV year

2011

Released

01.07.2010

ISBN

0142-2421

Periodical

SURFACE AND INTERFACE ANALYSIS

Volume

42

Number

5-6

State

United Kingdom of Great Britain and Northern Ireland

Pages from

649

Pages to

652

Pages count

4

BibTex

@article{BUT47312,
  author="Josef {Polčák} and Jan {Čechal} and Petr {Bábor} and Michal {Urbánek} and Stanislav {Průša} and Tomáš {Šikola}",
  title="Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method",
  journal="SURFACE AND INTERFACE ANALYSIS",
  year="2010",
  volume="42",
  number="5-6",
  pages="649--652",
  issn="0142-2421"
}