Detail publikačního výsledku

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

GABLECH, I.; CAHA, O.; SVATOŠ, V.; PEKÁREK, J.; NEUŽIL, P.; ŠIKOLA, T.

Originální název

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Anglický název

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Druh

Článek WoS

Originální abstrakt

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

Anglický abstrakt

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

Klíčová slova

Ion-beam sputtering deposition, Kaufman ion-beam source, titanium thin film, [001] preferential orientation, residual stress, rocking curve

Klíčová slova v angličtině

Ion-beam sputtering deposition, Kaufman ion-beam source, titanium thin film, [001] preferential orientation, residual stress, rocking curve

Autoři

GABLECH, I.; CAHA, O.; SVATOŠ, V.; PEKÁREK, J.; NEUŽIL, P.; ŠIKOLA, T.

Rok RIV

2018

Vydáno

30.09.2017

Nakladatel

ELSEVIER SCIENCE SA

Místo

LAUSANNE, SWITZERLAND

ISSN

0040-6090

Periodikum

Thin Solid Films

Svazek

638

Číslo

NA

Stát

Nizozemsko

Strany od

57

Strany do

62

Strany počet

6

URL

https://www.sciencedirect.com/science/article/pii/S0040609017305333

BibTex

@article{BUT137801,
  author="Imrich {Gablech} and Ondřej {Caha} and Vojtěch {Svatoš} and Jan {Pekárek} and Pavel {Neužil} and Tomáš {Šikola}",
  title="Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source",
  journal="Thin Solid Films",
  year="2017",
  volume="638",
  number="NA",
  pages="57--62",
  doi="10.1016/j.tsf.2017.07.039",
  issn="0040-6090",
  url="https://www.sciencedirect.com/science/article/pii/S0040609017305333"
}