Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

WoS Article

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (T) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using x-ray diffraction and x-ray reflectivity measurements. We showed that the Ti film deposited at T ≈273 °C was stress-free with corresponding lattice parameters a0 and c0 of (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c–axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from ≈0.58 nm to ≈0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems.

Ion-beam sputtering deposition, Kaufman ion-beam source, titanium thin film, [001] preferential orientation, residual stress, rocking curve

Ion-beam sputtering deposition, Kaufman ion-beam source, titanium thin film, [001] preferential orientation, residual stress, rocking curve

GABLECH, I.; CAHA, O.; SVATOŠ, V.; PEKÁREK, J.; NEUŽIL, P.; ŠIKOLA, T.

2018

30.09.2017

ELSEVIER SCIENCE SA

LAUSANNE, SWITZERLAND

0040-6090

Thin Solid Films

638

NA

Kingdom of the Netherlands

57

62

6

https://www.sciencedirect.com/science/article/pii/S0040609017305333