Detail publikačního výsledku

Electron beam directed etching of hexagonal boron nitride

ELBADAWI, C.; TRAN, T.; KOLÍBAL, M.; ŠIKOLA, T.; SCOTT, J.; CAI, Q.; LI, L.; TANIGUCHI, T.; WATANABE, K.; TOTH, M.; AHARONOVICH, I.; LOBO, C.

Originální název

Electron beam directed etching of hexagonal boron nitride

Anglický název

Electron beam directed etching of hexagonal boron nitride

Druh

Článek WoS

Originální abstrakt

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.

Anglický abstrakt

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.

Klíčová slova

Boron Nitride; Electron Beam Etching, van der Waals materials

Klíčová slova v angličtině

Boron Nitride; Electron Beam Etching, van der Waals materials

Autoři

ELBADAWI, C.; TRAN, T.; KOLÍBAL, M.; ŠIKOLA, T.; SCOTT, J.; CAI, Q.; LI, L.; TANIGUCHI, T.; WATANABE, K.; TOTH, M.; AHARONOVICH, I.; LOBO, C.

Rok RIV

2017

Vydáno

28.09.2016

Nakladatel

Royal Society of Chemistry

ISSN

2040-3372

Periodikum

Nanoscale

Svazek

8

Číslo

36

Stát

Spojené království Velké Británie a Severního Irska

Strany od

16182

Strany do

16186

Strany počet

5

URL

https://pubs.rsc.org/en/content/articlelanding/2016/NR/C6NR04959A

Plný text v Digitální knihovně

http://hdl.handle.net/11012/203158

BibTex

@article{BUT128626,
  author="Christopher {Elbadawi} and Trong Toan {Tran} and Miroslav {Kolíbal} and Tomáš {Šikola} and John {Scott} and Qiran {Cai} and Lu Hua {Li} and Takashi {Taniguchi} and Kenji {Watanabe} and Milos {Toth} and Igor {Aharonovich} and Charlene {Lobo}",
  title="Electron beam directed etching of hexagonal boron nitride",
  journal="Nanoscale",
  year="2016",
  volume="8",
  number="36",
  pages="16182--16186",
  doi="10.1039/c6nr04959a",
  issn="2040-3364",
  url="https://pubs.rsc.org/en/content/articlelanding/2016/NR/C6NR04959A"
}

Dokumenty

c6nr04959a