Publication result detail

Electron beam directed etching of hexagonal boron nitride

ELBADAWI, C.; TRAN, T.; KOLÍBAL, M.; ŠIKOLA, T.; SCOTT, J.; CAI, Q.; LI, L.; TANIGUCHI, T.; WATANABE, K.; TOTH, M.; AHARONOVICH, I.; LOBO, C.

Original Title

Electron beam directed etching of hexagonal boron nitride

English Title

Electron beam directed etching of hexagonal boron nitride

Type

WoS Article

Original Abstract

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.

English abstract

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material with unique optical properties that make it attractive for two dimensional (2D) photonic and optoelectronic devices. However, broad deployment and exploitation of hBN is limited by alack of suitable material and device processing and nano prototyping techniques. Here we present a high resolution, single step electron beam technique for chemical dry etching of hBN. Etching is achieved using H2O as a precursor gas, at both room temperature and elevated hBN temperatures. The technique enables damage-free, nano scale, iterative patterning of supported and suspended 2D hBN, thus opening the door to facile fabrication of hBN-based 2D heterostructures and devices.

Keywords

Boron Nitride; Electron Beam Etching, van der Waals materials

Key words in English

Boron Nitride; Electron Beam Etching, van der Waals materials

Authors

ELBADAWI, C.; TRAN, T.; KOLÍBAL, M.; ŠIKOLA, T.; SCOTT, J.; CAI, Q.; LI, L.; TANIGUCHI, T.; WATANABE, K.; TOTH, M.; AHARONOVICH, I.; LOBO, C.

RIV year

2017

Released

28.09.2016

Publisher

Royal Society of Chemistry

ISBN

2040-3372

Periodical

Nanoscale

Volume

8

Number

36

State

United Kingdom of Great Britain and Northern Ireland

Pages from

16182

Pages to

16186

Pages count

5

URL

https://pubs.rsc.org/en/content/articlelanding/2016/NR/C6NR04959A

Full text in the Digital Library

http://hdl.handle.net/11012/203158

BibTex

@article{BUT128626,
  author="Christopher {Elbadawi} and Trong Toan {Tran} and Miroslav {Kolíbal} and Tomáš {Šikola} and John {Scott} and Qiran {Cai} and Lu Hua {Li} and Takashi {Taniguchi} and Kenji {Watanabe} and Milos {Toth} and Igor {Aharonovich} and Charlene {Lobo}",
  title="Electron beam directed etching of hexagonal boron nitride",
  journal="Nanoscale",
  year="2016",
  volume="8",
  number="36",
  pages="16182--16186",
  doi="10.1039/c6nr04959a",
  issn="2040-3364",
  url="https://pubs.rsc.org/en/content/articlelanding/2016/NR/C6NR04959A"
}