Detail publikace

Functional nano-structuring of thin silicon nitride membranes

MATĚJKA, M. KRÁTKÝ, S. ŘÍHÁČEK, T. KNÁPEK, A. KOLAŘÍK, V.

Originální název

Functional nano-structuring of thin silicon nitride membranes

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.

Klíčová slova

membrane, nano optical device, electron optics, electron beam lithography, silicon nitride, reactive ion etching, silicon etching, microfabrication

Autoři

MATĚJKA, M.; KRÁTKÝ, S.; ŘÍHÁČEK, T.; KNÁPEK, A.; KOLAŘÍK, V.

Vydáno

13. 5. 2020

Nakladatel

Sciendo

ISSN

1335-3632

Periodikum

Journal of Electrical Engineering

Ročník

71

Číslo

2

Stát

Slovenská republika

Strany od

127

Strany do

130

Strany počet

4

URL

https://www.sciendo.com/article/10.2478/jee-2020-0019

Plný text v Digitální knihovně

http://hdl.handle.net/11012/196581

BibTex

@article{BUT165291,
  author="Milan {Matějka} and Stanislav {Krátký} and Tomáš {Říháček} and Alexandr {Knápek} and Vladimír {Kolařík}",
  title="Functional nano-structuring of thin silicon nitride membranes",
  journal="Journal of Electrical Engineering
",
  year="2020",
  volume="71",
  number="2",
  pages="127--130",
  doi="10.2478/jee-2020-0019",
  issn="1335-3632",
  url="https://www.sciendo.com/article/10.2478/jee-2020-0019"
}