Detail publikace

Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

ÉDES, Z. KŘÁPEK, V. ŠIKOLA, T.

Originální název

Modeling of Plasmon-Enhanced Photoluminescence of Si Nanocrystals Embedded in Thin Silicon-Rich Oxinitride Layer

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Plasmon-enhanced photoluminescence of silicon nanocrystals embedded in silicon-rich oxinitride thin film is calculated using finite-difference time-domain simulations. Emitters are represented as point-like dipoles and the photoluminescence enhancement is calculated depending on the emitter’s position and polarization with respect to the plasmonic metal nanoparticle placed on top of the layer. We show that the photoluminescence enhancement is dominated by the excitation enhancement even for tuning the metal nanoparticle size to the emission wavelength.

Klíčová slova

Plasmon Enhancement; Photoluminescence; SRON

Autoři

ÉDES, Z.; KŘÁPEK, V.; ŠIKOLA, T.

Vydáno

15. 1. 2016

ISSN

0587-4246

Periodikum

ACTA PHYSICA POLONICA A

Ročník

129

Číslo

1A

Stát

Polská republika

Strany od

A70

Strany do

A72

Strany počet

3

URL

http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap14.pdf