Detail publikace

Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers

MOZALEV, A. VAZQUEZ, R. CALAVIA, R. BITTENCOURT, C. GISPERT-GUIRADO, F. LLOBET, E. HUBALEK, J.

Originální název

Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers

Typ

abstrakt

Jazyk

angličtina

Originální abstrakt

Nanocomposite niobium-aluminium oxide films and columnlike nanostructured niobium oxide films are prepared by combining anodizing, chemical etching and annealing of sputtered Al/Nb metal layers. Under appropriate formation conditions, the films show dielectric or n-type semiconductor behavior. Potential applications are as active layers for chemical sensors and dielectrics for specific capacitors

Klíčová slova

anodizing, niobium oxide, porous alumina, nanostructures, dielectric properties, sensors

Autoři

MOZALEV, A.; VAZQUEZ, R.; CALAVIA, R.; BITTENCOURT, C.; GISPERT-GUIRADO, F.; LLOBET, E.; HUBALEK, J.

Vydáno

14. 8. 2012

Nakladatel

ISE

Místo

Linz, Austria

Strany od

1

Strany do

1

Strany počet

1

BibTex

@misc{BUT96860,
  author="Alexander {Mozalev} and Rosa Maria {Vazquez} and Raul {Calavia} and Ca. {Bittencourt} and Francesc {Gispert-Guirado} and Eduard {Llobet} and Jaromír {Hubálek}",
  title="Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers",
  booktitle="9th International Symposium on Electrochemical Micro & Nanosystem Technology (EMNT2012)",
  year="2012",
  pages="1--1",
  publisher="ISE",
  address="Linz, Austria",
  note="abstract"
}