Detail publikačního výsledku

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

KOKTAVÝ, P.; KOKTAVÝ, B.

Originální název

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

Anglický název

On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.

Anglický abstrakt

The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction.

Klíčová slova

Microplasma noise, GaAsP LED diode, PN junction, Avalanche, Impact ionization

Klíčová slova v angličtině

Microplasma noise, GaAsP LED diode, PN junction, Avalanche, Impact ionization

Autoři

KOKTAVÝ, P.; KOKTAVÝ, B.

Vydáno

05.09.2006

Nakladatel

Slovak University of Technology in Bratislava

Místo

Bratislava

ISBN

80-227-2467-X

Kniha

Physical and Material Engineering 2006

Strany od

56

Strany počet

4

BibTex

@inproceedings{BUT20221,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions",
  booktitle="Physical and Material Engineering 2006",
  year="2006",
  pages="4",
  publisher="Slovak University of Technology in Bratislava",
  address="Bratislava",
  isbn="80-227-2467-X"
}