Detail publikačního výsledku

Chaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistors

PETRŽELA, J.

Originální název

Chaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistors

Anglický název

Chaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistors

Druh

Článek WoS

Originální abstrakt

This paper is focused on the investigation of self-oscillation regimes associated with very simple structure of lambda diode. This building block is constructed by using coupled generalized bipolar transistors. In the stage of mathematical modeling, each transistor is considered as two-port de-scribed by full admittance matrix with scalar polynomial forward trans-conductance and linear backward trans-conductance. Thorough numerical analysis including routines of dynamical flow quantification indicate the existence of self-excited dense strange attractors. Plots showing first two Lyapunov exponents as functions of adjustable parameters, signal entropy calculated from gen-erated time sequence, sensitivity analysis, and other results are provided in this paper. By the construction of a flow-equivalent chaotic oscillator, robustness and long-time geometrical sta-bility of the generated chaotic attractors is documented by the experimental measurement, namely by showing captured oscilloscope screenshots.

Anglický abstrakt

This paper is focused on the investigation of self-oscillation regimes associated with very simple structure of lambda diode. This building block is constructed by using coupled generalized bipolar transistors. In the stage of mathematical modeling, each transistor is considered as two-port de-scribed by full admittance matrix with scalar polynomial forward trans-conductance and linear backward trans-conductance. Thorough numerical analysis including routines of dynamical flow quantification indicate the existence of self-excited dense strange attractors. Plots showing first two Lyapunov exponents as functions of adjustable parameters, signal entropy calculated from gen-erated time sequence, sensitivity analysis, and other results are provided in this paper. By the construction of a flow-equivalent chaotic oscillator, robustness and long-time geometrical sta-bility of the generated chaotic attractors is documented by the experimental measurement, namely by showing captured oscilloscope screenshots.

Klíčová slova

admittance parameters; chaotic oscillator; lambda diode; Lyapunov exponents; strange attractors; vector field

Klíčová slova v angličtině

admittance parameters; chaotic oscillator; lambda diode; Lyapunov exponents; strange attractors; vector field

Autoři

PETRŽELA, J.

Rok RIV

2021

Vydáno

07.04.2021

Nakladatel

MDPI

Místo

Basel (Switzerland)

ISSN

2076-3417

Periodikum

Applied Sciences-Basel

Svazek

11

Číslo

8

Stát

Švýcarská konfederace

Strany od

3326

Strany do

3347

Strany počet

22

URL

https://www.mdpi.com/2076-3417/11/8/3326

Plný text v Digitální knihovně

http://hdl.handle.net/11012/196758

BibTex

@article{BUT171114,
  author="Jiří {Petržela}",
  title="Chaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistors",
  journal="Applied Sciences-Basel",
  year="2021",
  volume="11",
  number="8",
  pages="3326--3347",
  doi="10.3390/app11083326",
  url="https://www.mdpi.com/2076-3417/11/8/3326"
}

Dokumenty

applsci-11-03326-v2