Detail publikačního výsledku

Voltage-Mode Elliptic Band-Pass Filter Based on Multiple-Input Transconductor

PROMMEE, P.; KARAWANICH, K.; KHATEB, F.; KULEJ, T.

Originální název

Voltage-Mode Elliptic Band-Pass Filter Based on Multiple-Input Transconductor

Anglický název

Voltage-Mode Elliptic Band-Pass Filter Based on Multiple-Input Transconductor

Druh

Článek WoS

Originální abstrakt

This paper presents a new voltage-mode elliptic band-pass filter based on a multiple-input transconductor (MI-OTA). The MI-OTA's structure employs the multiple-input MOS transistor technique that simply enables to increase the number of OTA's inputs without increasing the number of current branches or the differential pairs. The MI-OTA features high linearity over a wide input range with a compact and simple CMOS structure. From the advantage of multiple inputs, it enables to construct the arbitrarily summing and subtracting under the proposed voltage-mode filter design procedure. The filter is designed and simulated in Cadence environment using 0.18 mu m TSMC CMOS technology. The filter offers 72.9 dB dynamic range for 2 % total harmonic distortion (THD) for sine input signal of 0.5 Vpp @ 1kHz with voltage supply +/- 0.9V. The simulation results of the filter are in agreement with the RLC prototype. The experimental results using commercially available IC are also included to confirm the proposed filter that are in good agreement with the simulation results.

Anglický abstrakt

This paper presents a new voltage-mode elliptic band-pass filter based on a multiple-input transconductor (MI-OTA). The MI-OTA's structure employs the multiple-input MOS transistor technique that simply enables to increase the number of OTA's inputs without increasing the number of current branches or the differential pairs. The MI-OTA features high linearity over a wide input range with a compact and simple CMOS structure. From the advantage of multiple inputs, it enables to construct the arbitrarily summing and subtracting under the proposed voltage-mode filter design procedure. The filter is designed and simulated in Cadence environment using 0.18 mu m TSMC CMOS technology. The filter offers 72.9 dB dynamic range for 2 % total harmonic distortion (THD) for sine input signal of 0.5 Vpp @ 1kHz with voltage supply +/- 0.9V. The simulation results of the filter are in agreement with the RLC prototype. The experimental results using commercially available IC are also included to confirm the proposed filter that are in good agreement with the simulation results.

Klíčová slova

Elliptic filter; band-pass filter; transconductor; multiple-input OTA

Klíčová slova v angličtině

Elliptic filter; band-pass filter; transconductor; multiple-input OTA

Autoři

PROMMEE, P.; KARAWANICH, K.; KHATEB, F.; KULEJ, T.

Vydáno

08.03.2021

Nakladatel

IEEE

Místo

PISCATAWAY

ISSN

2169-3536

Periodikum

IEEE Access

Svazek

9

Číslo

1, IF: 3,745

Stát

Spojené státy americké

Strany od

32582

Strany do

32590

Strany počet

9

URL

https://ieeexplore.ieee.org/document/9359768

Plný text v Digitální knihovně

http://hdl.handle.net/11012/196454

BibTex

@article{BUT170593,
  author="Pipat {Prommee} and KHUNANON {KARAWANICH} and Fabian {Khateb} and Tomasz {Kulej}",
  title="Voltage-Mode Elliptic Band-Pass Filter Based on Multiple-Input Transconductor",
  journal="IEEE Access",
  year="2021",
  volume="9",
  number="1, IF: 3,745",
  pages="32582--32590",
  doi="10.1109/ACCESS.2021.3060939",
  issn="2169-3536",
  url="https://ieeexplore.ieee.org/document/9359768"
}

Dokumenty

Voltage-Mode Elliptic Band-Pass Filter Based on Multiple-Input Transconductor