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KŘÁPEK, V.; KLENOVSKÝ, P.; ŠIKOLA, T.
Originální název
Excitonic fine structure splitting in type-II quantum dots
Anglický název
Druh
Článek WoS
Originální abstrakt
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.
Anglický abstrakt
Klíčová slova
Quantum dots; fine structure; calculations
Klíčová slova v angličtině
Autoři
Rok RIV
2016
Vydáno
25.11.2015
ISSN
1098-0121
Periodikum
PHYSICAL REVIEW B
Svazek
92
Číslo
19
Stát
Spojené státy americké
Strany od
195530-1
Strany do
195530-8
Strany počet
8