Detail publikačního výsledku

Noise sources in interface between mono-crystalline and amorphous semiconductors

PAVELKA, J.; ŠIKULA, J.; TACANO, M.; CHVÁTAL, M.; DALLAEVA, D.; GRMELA, L.

Originální název

Noise sources in interface between mono-crystalline and amorphous semiconductors

Anglický název

Noise sources in interface between mono-crystalline and amorphous semiconductors

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated.

Anglický abstrakt

RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated.

Klíčová slova

RTS noise, trap, GaN, InGaAs

Klíčová slova v angličtině

RTS noise, trap, GaN, InGaAs

Autoři

PAVELKA, J.; ŠIKULA, J.; TACANO, M.; CHVÁTAL, M.; DALLAEVA, D.; GRMELA, L.

Rok RIV

2014

Vydáno

25.11.2013

Nakladatel

Comenius University

Místo

Bratislava

ISBN

978-80-223-3501-0

Kniha

Proceedings of 8th solid state surfaces and interfaces

Strany od

128

Strany do

129

Strany počet

2

BibTex

@inproceedings{BUT103237,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano} and Miloš {Chvátal} and Dinara {Sobola} and Lubomír {Grmela}",
  title="Noise sources in interface between mono-crystalline and amorphous semiconductors",
  booktitle="Proceedings of 8th solid state surfaces and interfaces",
  year="2013",
  pages="128--129",
  publisher="Comenius University",
  address="Bratislava",
  isbn="978-80-223-3501-0"
}