This project is focused on exploring molecular behaviour on Graphene/SiC substrate and remote graphene doping induced by X-ray irradiation as a fundamental knowledge for control of molecular growth via a change of substrate properties. Graphene is fabricated via thermal decomposition of SiC and behaviour of para-hexaphenyl molecules is studied on this surface. Remote graphene doping induced by X-Ray irradiation is then calibrated and used for doping of graphene with adsorbed molecules.

CEITEC VUT-J-19-6051

čeština

Stará Veronika, Ing. - hlavní řešitel
Čechal Jan, prof. Ing., Ph.D. - spoluřešitel

Středoevropský technologický institut VUT
- odpovědné pracoviště (15.1.2020 - nezadáno)
Středoevropský technologický institut VUT
- příjemce (1.1.2019 - 31.12.2019)

Odpovědnost: Stará Veronika, Ing.