Detail publikace

MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS

ŠICNER, J. KOKTAVÝ, P. MACKŮ, R.

Originální název

MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The article deals with the diagnostics application to local defects on the edge in silicon solar cells by monitoring their optical and thermal activities during electrical excitation. During the measurement is solar cell connected to a voltage source in the reverse direction. Radiation generated from reverse-biased pn junction defects is used to study local properties. It proves to be useful to measure surface radiation and to make light spots (defects) localization. By the same way is possible to measure the radiation intensity and optical spectrum.

Klíčová slova

Solar cell, local defect, nondestructive testing.

Autoři

ŠICNER, J.; KOKTAVÝ, P.; MACKŮ, R.

Rok RIV

2012

Vydáno

28. 6. 2012

Nakladatel

LITERA

Místo

Brno

ISBN

978-80-214-4539-0

Kniha

Electronic Devices and Systems IMAPS CS International Conference 2012

Edice

1

Číslo edice

1

Strany od

95

Strany do

100

Strany počet

6

BibTex

@inproceedings{BUT93069,
  author="Jiří {Šicner} and Pavel {Koktavý} and Robert {Macků}",
  title="MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS",
  booktitle="Electronic Devices and Systems IMAPS CS International Conference 2012",
  year="2012",
  series="1",
  number="1",
  pages="95--100",
  publisher="LITERA",
  address="Brno",
  isbn="978-80-214-4539-0"
}