Detail publikace

On the determination of silicon solar cell properties based on capacitance characteristics measurement

MACKŮ, R. KOKTAVÝ, P.

Originální název

On the determination of silicon solar cell properties based on capacitance characteristics measurement

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Diffusion technology based pn junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased pn junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown, too. The capacitance versus reverse voltage was measured using the "Auto balancing bridge method", which proved to serve the purpose very well. From experimental data we calculate electric field intensity and subsequently the properties of local defect is possible to determine.

Klíčová slova

Silicon Solar Cell, Barrier Capacitance, Local Defects

Autoři

MACKŮ, R.; KOKTAVÝ, P.

Rok RIV

2010

Vydáno

1. 9. 2010

Nakladatel

Novpress

Místo

Brno

ISBN

978-80-214-4138-5

Kniha

Electronic Devices and Systems, IMAPS CS International Conference 2010

Edice

1

Strany od

202

Strany do

208

Strany počet

7

BibTex

@inproceedings{BUT35153,
  author="Robert {Macků} and Pavel {Koktavý}",
  title="On the determination of silicon solar cell properties based on capacitance characteristics measurement",
  booktitle="Electronic Devices and Systems, IMAPS CS International Conference 2010",
  year="2010",
  series="1",
  pages="202--208",
  publisher="Novpress",
  address="Brno",
  isbn="978-80-214-4138-5"
}