Controlled faceting in (110) germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth

Controlled faceting in (110) germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth

Článek WoS

We show that the hexagonal cross-section of germanium nanowires grown in the (110) direction by physical vapor deposition is a consequence of minimization of surface energy of the collector droplet. If the droplet is lost or solidified, two (001) sidewall facets are quickly overgrown and the nanowire exhibits a rhomboidal cross-section. This process can be controlled by switching between the liquid and solid state of the droplet, enabling the growth of nanowires with segments having different cross-sections. These experiments are supported by in-situ microscopic bservations and theoretical model

We show that the hexagonal cross-section of germanium nanowires grown in the (110) direction by physical vapor deposition is a consequence of minimization of surface energy of the collector droplet. If the droplet is lost or solidified, two (001) sidewall facets are quickly overgrown and the nanowire exhibits a rhomboidal cross-section. This process can be controlled by switching between the liquid and solid state of the droplet, enabling the growth of nanowires with segments having different cross-sections. These experiments are supported by in-situ microscopic bservations and theoretical model

Nanowires; SEM; Germanium; VLS, VSS.

Nanowires; SEM; Germanium; VLS, VSS.

KOLÍBAL, M.; KALOUSEK, R.; NOVÁK, L.; VYSTAVĚL, T.; ŠIKOLA, T.

2013

11.05.2012

0003-6951

Applied Physics Letters

100

20

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203102-1

203102-4

4