Course detail

Junctions and nanostructures

FEKT-DFY1Acad. year: 2011/2012

Quantum Mechanics essentials. The interfaces: semiconductor A-semiconductor B, semiconductor-metal, semiconductor-metal interface. Depletion layer, properties. Transport of carriers through the interface. Photovoltaic phenomena. Noise in semiconductors. Limits for structures miniaturization. Principal limits by Quantum and Statistical Physics.

Language of instruction

Czech

Number of ECTS credits

Mode of study

Not applicable.

Guarantor

prof. RNDr. Pavel Tománek, CSc.

Department

Department of Physics (UFYZ)

Learning outcomes of the course unit

The student will acquire ideas about modern Physics description and explanation of phenomena, that take place in semiconductor structures, on their interfaces and in nanostructures. He understands the nature of physical limits in the semiconductor devices miniaturization.

Prerequisites

Prerequisities - Magister degree in Electrical Engiennering or related Diploma

Co-requisites

Not applicable.

Planned learning activities and teaching methods

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.

Assesment methods and criteria linked to learning outcomes

project, final exam

Course curriculum

The essentials of Solids. The semiconductor interface. Homo- and heterojunctions. Poisson's equation.
The metal-semiconductor interface. Charge and potential distribution, Poisson's equation. Depletion layer, capacitance, frequency dependence. Transport of carriers through the interface.
The insulator-semiconductor interface. Charge and potential distribution, Poisson's equation. Depletion layer, capacitance, frequency dependence. Transport of carriers through the interface.
Semiconductor structures produced by advanced technologies. Quantum effects and hot electrons in semiconductor stuctures. Quantum dots and wires.Superlattices. Resonant tunnelling. Ballistic transport.
Optical phenomena in semiconductors. Radiation transitions. Laser structures.
Photovoltaic phenomena.
Stochastic phenomena. Noise in semiconductors. Intrinsic types of the noise: thermal, shot noise, g-n noise. Physical origin. 1/f noise. RTS noise. Model of RTS noise in sub-micron MOSFET devices.
Limits for device miniaturization. Power per unit operation, energy and switching time. Principal limitations from the point of view of Quantum and Statistical Physics.
Fundamental nanostructures. Near-field interaction (force, optical, electric, magnetic, thermal,and others). Application of nanotechnology: Chemical and material synthesis. Design and fabrication of nanostructures. Computer and theoretical nanotechnology. Tools and devices for Nanotechnology. Medical and biomedical science. Detection and localization of nanostructures. Nanoelectronics. Molecular electronics.

Work placements

Not applicable.

Aims

The target of the lecture is to present important phenomena of temporary Semiconductors interfaces and nanostructures with help of appropriate tools - Quantum and Statistical Physics.

Specification of controlled education, way of implementation and compensation for absences

Not applicable.

Recommended optional programme components

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

Not applicable.

Type of course unit

Seminar

39 hod., optionally

Teacher / Lecturer

doc. RNDr. Pavel Hruška, CSc.
prof. RNDr. Pavel Tománek, CSc.

Syllabus

VUT

Faculties

University Institutes

Parts

Junctions and nanostructures

Type of course unit