Project detail
RandD of high voltage Si rectifiers for effective conversion of high current power
Duration: 1.1.2018 — 31.12.2020
Funding resources
Technologická agentura ČR - Program na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)
On the project
Description in English
The aim of the project is to create a portfolio of high voltage (> 600V) silicon diodes for High Performance Power Conversion (HPPC) and Motor Control (MC) applications in the automotive, renewable energy and power grids sectors. The devices are used for efficient conversion of high current powers. The use of new manufacturing technology with the application of developed solutions will take place immediately after the achievement of planned results - in 2021.
Key words in English
Semiconductor, Silicon, Rectifier, power, voltage, current, EV
Mark
TH03010006
Default language
Czech
People responsible
Bábor Petr, doc. Ing., Ph.D. - principal person responsible
Bartošík Miroslav, doc. Ing., Ph.D. - fellow researcher
Potoček Michal, Ing., Ph.D. - fellow researcher
Procházka Pavel, Ing., Ph.D. - fellow researcher
Units
Fabrication and Characteris. of Nanostr.
- responsible department (15.5.2017 - not assigned)
Fabrication and Characteris. of Nanostr.
- beneficiary (15.5.2017 - not assigned)
Results
BÁBOR, P.; POTOČEK, M.; KOLÍBAL, M.; ŠIK, O.: Metody kvantitativní analýzy dopantů a vysokonapěťová diagnostika čipů; Metody kvantitativní analýzy dopantů a vysokonapěťová diagnostika čipů. Purkyňova 123, Brno 61200, budova C, laboratore cistych prostor. URL: http://nano.ceitec.cz/. (ostatní)
Detail
Responsibility: Bábor Petr, doc. Ing., Ph.D.