Project detail

Model parameters extraction for semiconductor structures

Duration: 1.1.2003 — 31.12.2005

Funding resources

Grantová agentura České republiky - Standardní projekty

On the project

Keywords
simulace polovodičových struktur, modelování polovodičových prvků, extrakce parametrů modelu, semiconductor structures simulation, semiconductor devices modeling, model parameters extraction

Key words in English
Neuvedeno.

Mark

GA102/03/0720

Default language

Czech

People responsible

Recman Milan, Ing., CSc. - principal person responsible
Horák Michal, RNDr., CSc. - fellow researcher

Units

Department of Microelectronics
- responsible department (1.1.1989 - not assigned)
Department of Microelectronics
- beneficiary (2.4.2002 - 31.12.2005)

Results

RECMAN, M. Early Access Tools - Integration of TCAD Tools and Fabrication. In Electronic Devices and Systems 2003 - Proceedings. Brno: Novotný-Brno, 2003. 6 p. ISBN: 80-214-2452-4.
Detail

RECMAN, M. HSPICE Statistical Modeling. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. 7 p. ISBN: 80-214-2461-3.
Detail

RECMAN, M. CMOS Circuits Fault Simulation. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. 7 p. ISBN: 80-214-2461-3.
Detail

RECMAN, M. Diode Model Parameters Extraction. In Socrates Workshop 2004. Intensive Training Programme in Electronic. 2004. 6 p. ISBN: 80-214-2819-8.
Detail

RECMAN, M. HSPICE Model Parameters Extraction. In Proceedings of the Socrates Workshop 2003. Brno: Novotný-Brno, 2003. 5 p. ISBN: 80-214-2461-3.
Detail

RECMAN, M. Propojení strukturního a elektrického simulátoru. In 18th International Microworkshop 2004. Sborník. 9. až 11.6.2004 Rožnov. 2004. 7 s. ISBN: 80-214-2818-X.
Detail

Responsibility: Recman Milan, Ing., CSc.