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Master's Thesis
Author of thesis: Ing. Michal Páleníček, Ph.D.
Acad. year: 2011/2012
Supervisor: Ing. Michal Urbánek, Ph.D.
Reviewer: Ing. Petr Tichopádek, Ph.D.
The thesis deals with the study and analysis of crystallographic defects on the surface of silicon wafers produced by Czochralski method. It focuses primarily on growth defects and oxygen precipitates, which play an important role in the development of appropriate nucleation centers for growth of stacking faults. The growth of stacking faults near the surface of silicon wafers is supported by their oxidation and selective etching. Such a highlighted stacking faults are known as the OISF (Oxidation Induced Stacking Fault). Spatial distribution of OISF on the wafer gives feedback to the process of pulling silicon single crystal and wafers surface quality. Moreover the work describes the device for automatic detection and analysis of OISF, which was developed for ON Semiconductor company in Rožnov Radhoštěm.
crystallographic defects, silicon, silicon defects, monocrystalline silicon, semiconductor silicon, Czochralski method, stacking faults, oxygen precipitation, oxide precipitates, OISF
Date of defence
18.06.2012
Result of the defence
Defended (thesis was successfully defended)
Grading
A
Language of thesis
Czech
Faculty
Fakulta strojního inženýrství
Department
Institute of Physical Engineering
Study programme
Applied Sciences in Engineering (N3901-2)
Field of study
Physical Engineering and Nanotechnology (M-FIN)
Composition of Committee
prof. RNDr. Tomáš Šikola, CSc. (předseda) prof. RNDr. Miroslav Liška, DrSc. (místopředseda) prof. RNDr. Bohumila Lencová, CSc. (člen) prof. RNDr. Jiří Komrska, CSc. (člen) prof. RNDr. Petr Dub, CSc. (člen) prof. RNDr. Radim Chmelík, Ph.D. (člen) prof. RNDr. Jiří Spousta, Ph.D. (člen) prof. Ing. Ivan Křupka, Ph.D. (člen) prof. RNDr. Pavel Zemánek, Ph.D. (člen) RNDr. Antonín Fejfar, CSc. (člen)
Supervisor’s reportIng. Michal Urbánek, Ph.D.
Grade proposed by supervisor: A
Reviewer’s reportIng. Petr Tichopádek, Ph.D.
Grade proposed by reviewer: A
Responsibility: Mgr. et Mgr. Hana Odstrčilová