Publication detail

Si Diode - Determination of Generation and Recombination Coefficients

RAŠKA, M. PALAI-DANY, T.

Original Title

Si Diode - Determination of Generation and Recombination Coefficients

Type

conference paper

Language

English

Original Abstract

The article deals with a study microplasma regions which is characterized by bistable current noise, microplasma noise. The microplasma noise is possible to describe with two state stochastic process of generation - recombination type. The cofficients generation and recombination can be determined by several methods, which are inside the article.

Keywords

microplasma, breakdown, PN junction, diode, recombination, generation

Authors

RAŠKA, M.; PALAI-DANY, T.

RIV year

2007

Released

13. 8. 2007

Publisher

University of Miskolc

Location

Miskolc, Hungary

ISBN

978-963-661-779-0

Book

6th International Conference of Phd Students

Edition

1

Edition number

1

Pages from

361

Pages to

366

Pages count

5

BibTex

@inproceedings{BUT28769,
  author="Michal {Raška} and Tomáš {Palai-Dany}",
  title="Si Diode - Determination of Generation and Recombination Coefficients",
  booktitle="6th International Conference of Phd Students",
  year="2007",
  series="1",
  number="1",
  pages="361--366",
  publisher="University of Miskolc",
  address="Miskolc, Hungary",
  isbn="978-963-661-779-0"
}